mosfet 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 2SK3900 features low on-state resistance r ds(on)1 =8.0mmax.(v gs =10v,i d = 41a) r ds(on)2 =10mmax.(v gs =4.5v,i d =41a) low c iss :c iss =3500 pf typ. absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v i d 82 a i dp * 246 a power dissipation t a =25 1.5 t c =25 104 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =60v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gate cut off voltage v gs(off) v ds =10v,i d =1ma 1.5 2.0 2.5 v forward transfer admittance y fs v ds =10v,i d =41a 28.1 56 s r ds(on)1 v gs =10v,i d =41a 6.3 8.0 m r ds(on)2 v gs =4.5v,i d =41a 7.4 10 m input capacitance c iss 3500 pf output capacitance c oss 660 pf reverse transfer capacitance c rss 240 pf turn-on delay time t on 18 ns rise time t r 11 ns turn-off delay time t off 62 ns fall time tf 5.5 ns total gate charge q g 65.5 nc gate to source charge q gs 11.5 nc gate to drain charge q gd 16.5 nc v dd = 48v v gs =10v i d =82a v ds =10v,v gs =0,f=1mhz i d =41a,v gs(on) =10v,r g =0 ,v dd =30v drain to source on-state resistance smd type smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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